APM2055N

APM2055N N-Channel Enhancement Mode MOSFET Features 20V/12A, RDS(ON)=55mΩ(typ.) @ V =10V GS RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages Applications Switching Regulators Switching Converters Pin Description 123 GD S Top View of TO-252 1 23 GDS Top View of SOT-223 D G Ordering and Marking Information S N-Channel MOSFET APM2055N H andling C ode Temp. Range Package Code Package Code U : TO -252 V : SO T-223 O peration Junction Tem p. Range C : -55 to 150° C H andling C ode TR : Tape & Reel APM2055N U : APM2055N XXXXX XX XXX - D ate Code APM2055N V : APM2055N XXXXX XX XXX - D ate Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS Drain-Source Voltage Gate-Source Voltage 20 V ±16 ID Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed 12 A 20 ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 1 www.anpec.com.tw APM2055N Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθjA Parameter Maximum Power Dissipation TA=25°C TA=100°C TO-252 SOT-223 TO-252 SOT-223 Maximum Junction Temperature...