N-channel Power MOSFET
STF20N65M5, STFI20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages
Dat...
Description
STF20N65M5, STFI20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages
Datasheet — production data
Features
Order codes
STF20N65M5 STFI20N65M5
VDS @ TJmax
RDS(on) max
710 V 0.19 Ω
ID 18 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
3 2 1
TO-220FP
123
I2PAKFP (TO-281)
Figure 1. Internal schematic diagram
$
' 3
!-V
Table 1. Device summary Order codes STF20N65M5 STFI20N65M5
Marking 20N65M5
Package
TO-220FP I2PAKFP (TO-281)
February 2013
This is information on a product in full production.
Doc ID 024223 Rev 1
Packaging Tube
1/15
www.st.com
15
Contents
Contents
STF20N65M5, STFI20N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ...
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