STW27NM60ND

STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $4!"  ' 3 !-V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A Designed for automotive applications and AEC-Q101 qualified The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Applications Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB27NM60ND STW27NM60ND Table 1. Device summary Marking Packages 27NM60ND D²PAK 27NM60ND TO-247 October 2013 This is information on a product in full production. DocID15406 Rev 4 Packaging Tape and reel Tube 1/19 www.st.com Contents Contents STB27NM60ND, STW27NM60ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . ....