STI20N65M5

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications TAB 2 1 D2PAK 3 TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 Marking 20N65M5 Package D2PAK I2PAK TO-220 TO-247 February 2013 This is information on a product in full production. Doc ID 022865 Rev 2 Packaging Tape and reel Tube 1/21 www.st.com 21 Contents Contents STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....