Document
STH270N4F3-2
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ F3 Power MOSFET in H2PAK-2 package
Datasheet − production data
Features
TAB
2 3
1
H2PAK-2
Figure 1. Internal schematic diagram
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Order codes STH270N4F3-2
VDS 40 V
RDS(on) max ID 1.7 mΩ 180 A
• Conduction losses reduced
• Low profile, very low parasitic inductance, high current package
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
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Order code STH270N4F3-2
Table 1. Device summary
Marking
Package
270N4F3
H2PAK-2
Packaging Tape and reel
May 2015
This is information on a product in full production.
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Contents
Contents
STH270N4F3-2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 H2PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STH270N4F3-2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS ID (1) ID (1) IDM (2)
Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT EAS(3)
Total dissipation at TC = 25 °C Single pulse avalanche energy
Tstg Storage temperature
Tj Operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=80 A, VDD=32 V
40 ± 20 180 180 720 300 1000
- 55 to 175
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Value 0.5 35
Unit
V A A A W mJ °C °C
Unit °C/W °C/W
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Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0, ID = 250 µA
IDSS
Zero gate voltage drain current
IGSS
Gate-body leakage current
VGS = 0, VDS = 40 V VGS = 0, VDS = 40 V, TC=125 °C
VDS = 0, VGS = ± 20 V
VGS(th) RDS(on)
Gate thre.