STP100N10F7

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB 13 D2PAK TAB TAB 23 1 DPAK TAB 123 TO-220FP 123 I2PAK 1 23 TO-220 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220 Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT(1) Total power dissipation ...