STFW1N105K3

STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. '* 6 Table 1. Device summary Order codes STF1N105K3 STFW1N105K3 STP1N105K3 Marking 1N105K3 Package TO-220FP TO-3PF TO-220 $0Y Packaging Tube January 2013 This is information on a product in full production. Doc ID 023509 Rev 2 1/18 www.st.com 18 Contents Contents STF1N105K3, STFW1N105K3, STP1N105K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . ....