STU27N3LH5

STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses ID 27 A 27 A 27 A Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). IPAK 3 2 1 3 1 DPAK TO-220 3 2 1 Figure 1. Internal schematic diagram D (TAB or 2) G (1) Table 1. Device summary Order codes STD27N3LH5 STU27N3LH5 STP27N3LH5 Marking 27N3LH5 27N3LH5 27N3LH5 S (3) sc08440 Package DPAK IPAK TO-220 Packaging Tape and reel Tube Tube March 2011 Doc ID 15617 Rev 3 1/21 www.st.com 21 Contents Contents STD27N3LH5, STP27N3LH5, STU27N3LH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . ....