STD6N62K3

STD6N62K3 Datasheet N-channel 620 V, 950 mΩ typ., 5.5 A MDmesh K3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected ID 5.5 A PTOT 90 W Applications Switching applications AM01476v1_tab Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Product status link STD6N62K3 Product summary Order code STD6N62K3 Marking 6N62K3 Package DPAK Packing Tape and reel DS8813 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR (2) Avalanche current, repetitive or not-repetitive EAS (3) Single pulse avalanche energy ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) dv/dt (4) Peak diode r...