STB6N62K3

STB6N62K3 STD6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3™ Power MOSFET in D²PAK, DPAK Features Order codes STB6N62K3 STD6N62K3 VDSS 620 V RDS(on) max. < 1.2 Ω ID Pw 5.5 A 90 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes STB6N62K3 STD6N62K3 Marking 6N62K3 TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Package D²PAK DPAK Packaging Tape and reel December 2011 Doc ID 022605 Rev 1 1/19 www.st.com 19 Contents Contents STB6N62K3, STD6N62K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data...