NTMD6P02

NTMD6P02, NVMD6P02 Power MOSFET 6 A, 20 V, P−Channel SOIC−8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified These Devices are Pb−Free and are RoHS Compliant NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 6 AMPERES, 20 VOLTS P−Channel D Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards G MAXIMUM RATINGS Rating Symbol Value Unit S Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Dra...