2SK4197FS

Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET 600V, 3.5A, 3.25Ω, TO-220F-3FS http://onsemi.com Features ON-reistance RDS(on)=2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) VDSS VGSS ID IDL IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=50V, L=5mH, IAV=3.3A (Fig.1) *2 L≤5mH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3FS Ratings 600 ±30 3.5 3.3 13 2.0 28 150 --55 to +150 29 3.3 Unit V V A A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Mille...