STQ1NK80ZR-AP

STN1NK80Z, STQ1NK80ZR-AP Datasheet N-channel 800 V, 13 Ω typ., 250 mA SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, 4) D(2) G(1) G(1) S(3) SOT-23 S(3) TO-92 Features Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected RDS(on) max. 16 Ω ID 250 mA Applications Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STN1NK80Z STQ1NK80ZR-AP Product summary Order code STN1NK80Z Marking N1NK80Z Package SOT-223 Packing Tape and reel Order code STQ1NK80ZR-AP Marking Q1NK80ZR Package TO-92 Packing Ammopack DS14259 - Rev 1 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com STN1NK80Z, STQ1NK80ZR-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD G...