STU1HN60K3

STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications Switching applications G(1) S(3) AM01476v1 Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order codes STD1HN60K3 STU1HN60K3 Table 1. Device summary Marking Package 1HN60K3 DPAK IPAK Packaging Tape and reel Tube April 2013 This is information on a product in full production. DocID024422 Rev 1 1/19 www.st.com 19 Contents Contents STD1HN60K3, STU1HN60K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...