Document
Ordering number : ENA1816A
SFT1440
N-Channel Power MOSFET
600V, 1.5A, 8.1Ω, Single TP/TP-FA
http://onsemi.com
Features
• ON-resistance RDS(on)=6.2Ω(typ.)
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs)
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 600 ±30 1.5 6.0 1.0 20 150
--55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7518-004
Package Dimensions unit : mm (typ) 7003-004
6.5 2.3 SFT1440-E 6.5
5.0 0.5
5.0
44
2.3 0.5
SFT1440-TL-E
0.8 5.5 1.5
2.5 7.0 1.2
5.5 1.5 7.0
0.85 0.7 0.6 123
2.3 2.3
0.8 1.6 7.5
1.2
0.5
1 : Gate 2 : Drain 3 : Source 4 : Drain
TP
0.85 123
0.6
2.3 2.3
0.5
0 to 0.2 1.2
1 : Gate 2 : Drain 3 : Source 4 : Drain
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
T1440
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
(TP, TP-FA)
1
TL
2,4
3
Semiconductor Components Industries, LLC, 2013 July, 2013
71112 TKIM/81110PE TKIM TC-00002437 No. A1816-1/9
SFT1440
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs | RDS(on)1 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.8A ID=0.8A, VGS=10V VDS=30V, f=1MHz
See specified Test Circuit.
VDS=300V, VGS=10V, ID=1.5A IS=1.5A, VGS=0V
Switching Time Test Circuit
VIN 10V
0V
VIN
PW=10μs D.C.≤1%
G
VDD=200V
ID=0.8A RL=250Ω D VOUT
SFT1440 P.G 50Ω S
min 600
Ratings typ
3.0 1.0 6.2 130 25 4.0 9.1 15 18 19 6.3 1.4 3.6
0.85
max 100 ±10 5.0 8.1
1.2
Unit
V μA μA V S
Ω pF pF pF ns ns ns ns nC nC nC V
Drain Current, ID -- A 10V
Drain Current, ID -- A Tc= --25°C
Ordering Information
Device SFT1440-E SFT1440-TL-E
Package TP
TP-FA
ID -- VDS
2.0
1.8 8V 1.6 15V 7V
1.4
1.2
1.0
0.8
0.6
0.4 6V
0.2
0 VGS=5V
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT15875
Shipping 500pcs./bag 700pcs./reel
memo Pb Free
2.0
VDS=10V
1.8 1.6
ID -- VGS
25°C
1.4
75°C
1.2
1.0
0.8
0.6
0.4
0.2
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Gate-to-Source Voltage, VGS -- V IT15876
No. A1816-2/9
SFT1440
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Forward Transfer Admittance, | yfs | -- S
20 RDS(on) -- VGS
Ta=25°C
18
16 ID=0.8A
14
12
10
8
6
4
2 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Gate-to-So|uyrcfesV|o-l-tagIeD, VGS -- V
IT15877
3
2 VDS=10V
1.0
7
5 25°C
3
2 0.1
Tc=
--25°C 75°C
7
5
3 2
0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1
2 3 5 7 1.0
2
100
Drain Current,
SW Time
I-D-
-- A
ID
IT15879
VDD=200V
7 VGS=10V
5
tf
3
2 td(off)
tr 10 td(on)
7 5 0.1 2
16
VDS=300V 14 ID=1.5A
3 5 7 1.0
Drain Current,
VGS --
IQDg--
A
12
10
8
6
4
2
0 0123456
Total Gate Charge, Qg -- nC
23 IT15893
78 IT15895
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
Source Current, IS -- A Tc=75°C 25°C --25°C
18 RDS(on) -- Tc
16
14
12
10
8
6
4
2
0 --60 --40 --20 3
2 VGS=0V
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IS -- VSD
IT15878
1.0 7 5
3 2
0.1 7 5
3 2
0.01 7 5 3 2
0.001 0.2
7 5 3 2
100 7 5 3 2
0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT15880
f=1MHz
Ciss
Coss
10 7
5 Crss
3 2
1.0 0
5 10 15 20 25 30 35 40 45 50
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15894
10
7 IDP=6.0A (PW≤10μs)
5 3 2
1.0 7 5 3 2
0.1 7
ID=1.5AOtlhimpiseitraeardteiaobnyisiRnDDSC(oonp)e.ration10(T0ma=1s205m°sC1m) s100μ1s0μs
5
3
2 Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Drain-to-Source Voltage, VDS -- V
5 7 1000 IT15884
No. A1816-3/9
Switching Time, SW Time -- ns
Gate-to-Source Voltage, VGS -- V
Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W
SFT1440
1.2 PD -- Ta
25 PD -- Tc
1.0
0.8
0.6 No heat sink
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT15885
20
15
.