DatasheetsPDF.com

SFT1440 Dataheets PDF



Part Number SFT1440
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet SFT1440 DatasheetSFT1440 Datasheet (PDF)

Ordering number : ENA1816A SFT1440 N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 600 .

  SFT1440   SFT1440


Document
Ordering number : ENA1816A SFT1440 N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 600 ±30 1.5 6.0 1.0 20 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7518-004 Package Dimensions unit : mm (typ) 7003-004 6.5 2.3 SFT1440-E 6.5 5.0 0.5 5.0 44 2.3 0.5 SFT1440-TL-E 0.8 5.5 1.5 2.5 7.0 1.2 5.5 1.5 7.0 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain TP 0.85 123 0.6 2.3 2.3 0.5 0 to 0.2 1.2 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) T1440 LOT No. • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA) 1 TL 2,4 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71112 TKIM/81110PE TKIM TC-00002437 No. A1816-1/9 SFT1440 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.8A ID=0.8A, VGS=10V VDS=30V, f=1MHz See specified Test Circuit. VDS=300V, VGS=10V, ID=1.5A IS=1.5A, VGS=0V Switching Time Test Circuit VIN 10V 0V VIN PW=10μs D.C.≤1% G VDD=200V ID=0.8A RL=250Ω D VOUT SFT1440 P.G 50Ω S min 600 Ratings typ 3.0 1.0 6.2 130 25 4.0 9.1 15 18 19 6.3 1.4 3.6 0.85 max 100 ±10 5.0 8.1 1.2 Unit V μA μA V S Ω pF pF pF ns ns ns ns nC nC nC V Drain Current, ID -- A 10V Drain Current, ID -- A Tc= --25°C Ordering Information Device SFT1440-E SFT1440-TL-E Package TP TP-FA ID -- VDS 2.0 1.8 8V 1.6 15V 7V 1.4 1.2 1.0 0.8 0.6 0.4 6V 0.2 0 VGS=5V 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT15875 Shipping 500pcs./bag 700pcs./reel memo Pb Free 2.0 VDS=10V 1.8 1.6 ID -- VGS 25°C 1.4 75°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Gate-to-Source Voltage, VGS -- V IT15876 No. A1816-2/9 SFT1440 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, | yfs | -- S 20 RDS(on) -- VGS Ta=25°C 18 16 ID=0.8A 14 12 10 8 6 4 2 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gate-to-So|uyrcfesV|o-l-tagIeD, VGS -- V IT15877 3 2 VDS=10V 1.0 7 5 25°C 3 2 0.1 Tc= --25°C 75°C 7 5 3 2 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 100 Drain Current, SW Time I-D- -- A ID IT15879 VDD=200V 7 VGS=10V 5 tf 3 2 td(off) tr 10 td(on) 7 5 0.1 2 16 VDS=300V 14 ID=1.5A 3 5 7 1.0 Drain Current, VGS -- IQDg-- A 12 10 8 6 4 2 0 0123456 Total Gate Charge, Qg -- nC 23 IT15893 78 IT15895 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Ciss, Coss, Crss -- pF Source Current, IS -- A Tc=75°C 25°C --25°C 18 RDS(on) -- Tc 16 14 12 10 8 6 4 2 0 --60 --40 --20 3 2 VGS=0V 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IS -- VSD IT15878 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 7 5 3 2 100 7 5 3 2 0.4 0.6 0.8 1.0 1.2 Diode Ciss, Forward Voltage, Coss, Crss V-S-DV--DVS IT15880 f=1MHz Ciss Coss 10 7 5 Crss 3 2 1.0 0 5 10 15 20 25 30 35 40 45 50 Drain-to-Source A Voltage, SO VDS -- V IT15894 10 7 IDP=6.0A (PW≤10μs) 5 3 2 1.0 7 5 3 2 0.1 7 ID=1.5AOtlhimpiseitraeardteiaobnyisiRnDDSC(oonp)e.ration10(T0ma=1s205m°sC1m) s100μ1s0μs 5 3 2 Tc=25°C 0.01 Single pulse 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 7 1000 IT15884 No. A1816-3/9 Switching Time, SW Time -- ns Gate-to-Source Voltage, VGS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W SFT1440 1.2 PD -- Ta 25 PD -- Tc 1.0 0.8 0.6 No heat sink 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15885 20 15 .


PM3219 SFT1440 NTDV18N06L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)