RRH050P03

RRH050P03 Pch -30V -5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD -30V 50mW -5A 2.0W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating ; RoHS compliant lOutline SOP8 (5) (6) (7) (8) lInner circuit (4) (3) (2) (1) (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lApplication DC/DC Converter lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 330 12 2,500 TB RRH050P03 Symbol VDSS ID *1 ID,pulse *2 VGSS EAS *3 PD *4 PD *5 Tj Tstg Value -30 5 20 20 0.2 2.0 0.65 150 -55 to +150 Unit V A A V mJ W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.C RRH050P03 lThermal resistance Parameter Thermal resistance, junction - ambient Thermal resistance, junction - ambient Data Sheet Symbol RthJA *4 RthJA *5 Values Min. Typ. Max. Unit - - 62.5 °C/W - - 125 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. Unit -30 - - V Breakdown voltage temperature coef...