QS5U13

QS5U13 　　2.5V Drive Nch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 100mΩ ±2.0A 1.25W lOutline TSMT5 　 　 　　　　　　 　　　　　　 　 　 　 　　　　　　 lFeatures 1) The QS5U13 combines Nch MOSFET with a 　　Schottky barrier diode in a single TSMT5 　　package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Load switch, DC/ DC conversion Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) Marking U13 Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Gate - Source voltage VGSS 12 V Continuous drain current ID ±2.0 A Pulsed drain current ID, *1 pulse ±8.0 A Continuous source current (body diode) IS 0.8 A Pulsed source current (body diode) IS, *1 pulse 3.2 A Power dissipation PD*3 0.9 W/element Junction temperature Tj 150 ℃ 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/10 20150730 - Rev.001 　 　 QS5U13 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VRM VR IF IFSM*2 PD*3 Tj ...