NTP5864N

NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features Low RDS(on) High Current Capability Avalanche Energy Specified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp = 10 ms) Continuous Drain Steady TC = 25°C Current − RqJC (Note 1) State TC = 100°C Power Dissipation − RqJC (Note 1) Steady TC = 25°C State TC = 100°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (L = 0.1 mH) VDSS VGS VGS ID PD IDM TJ, TSTG IS EAS IAS 60 ±20 ±30 63 45 107 54 252 −55 to 175 63 80 40 V V V A W A °C A mJ A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction−to−Case (Drain) − Steady State (Note 1) RθJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 1) RθJA 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 33 °C/W www.onsemi.com V(BR)DSS 60 V RDS(ON) MAX 12.4 mΩ @ 10 V ID MAX (Note 1) 63 A N−...