ATP201

Ordering number : ENA1547A ATP201 N-Channel Power MOSFET 30V, 35A, 17mΩ, Single ATPAK http://onsemi.com Features Low ON-resistance Slim package Protection diode in 4.5V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=50μH, IAV=18A *2 L≤50μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 35 105 30 150 --55 to +150 10 18 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP201-TL-H 4.6 2.6 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP201 LOT No. TL 6.05 0.7 4.6 1.7 7.3 0.5 9.5 0.5 0.1 2 1 0.8 3 0.6 2.3 2.3 0.55 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 61312 TKIM/82609PA TKIM TC-00002027...