QS5K2

Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 QS5K2 zStructure Silicon N-channel MOSFET zFeatures 1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). zApplications Switching zPackaging specifications Type QS5K2 Package Code Basic ordering unit (pieces) Taping TR 3000 zDimensions (Unit : mm) TSMT5 2.9 1.9 0.95 0.95 (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : K02 zInner circuit (5) ∗2 (4) ∗2 ∗1 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Gate (2) Tr1 Source Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Total power dissipation PD ∗2 Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Tch Tstg Limits 30 12 ±2.0 ±8.0 0.8 3.2 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 139 Unit °C/W °C/W Rev.A 1/3 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − 10 µA VGS=12V, VDS=0...