RDD050N20

Transistors 10V Drive Nch MOSFET RDD050N20 RDD050N20 zStructure Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. zApplication Switching zDimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) zPackaging specifications Package Type Code Basic ordering unit (pieces) RDD050N20 Taping TL 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed ID IDP ∗1 Source Current (Body Diode) Avalanche Current Avalanche Energy Continuous Pulsed IS ISP IAS EAS ∗1 ∗2 ∗2 Total Power Dissipation (TC=25°C) PD Channel Temperature Tch Storage Temperature Tstg ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C Limits 200 ±30 ±5 ±20 5 20 5 75 20 150 −55 to +150 Unit V V A A A A A mJ W °C °C zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 6.25 zEquivalent Circuit ∗2 ∗1 BODY DIODE ∗1 ∗2 GATE PROTECTION DIODE (1)GATE (2)DRAIN (3)SOURCE (1) (2) (3) ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Unit °C/W 1/5 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-Source Leakage IGSS Drain-Source Breakdown Voltage V(BR) DSS Zero Gate V...