Document
RCX330N25
Nch 250V 33A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 105mW
33A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25C Tc = 100C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25C Ta = 25C
Junction temperature
Range of storage temperature
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
lPackaging specifications Packaging Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code Marking
Bulk -
500 -
RCX330N25
Symbol
Value
Unit
VDSS
250
V
ID *1
33
A
ID *1
17.9
A
ID,pulse *2
132
A
VGSS
30
V
EAS *3
74.8
mJ
IAR *3
16.5
A
PD
40
W
PD
2.23
W
Tj
150
°C
Tstg
-55 to +150
°C
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
1/12
2013.04 - Rev.A
RCX330N25 lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
3.13 °C/W
-
-
56 °C/W
-
-
265
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
250
-
-
V
Zero gate voltage drain current
VDS = 250V, VGS = 0V
IDSS
-
Tj = 25°C
-
10
mA
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
-
100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3.0
-
5.0
V
Static drain - source on - state resistance
VGS = 10V, ID = 16.5A
-
RDS(on) *4 VGS = 10V, ID = 16.5A -
Tj = 125°C
77
105
mW 165 230
Forward transfer admittance
gfs
VDS = 10V, ID = 16.5A
10
20
-
S
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
2/12
2013.04 - Rev.A
RCX330N25
Data Sheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Input capacitance
Ciss
VGS = 0V
-
4500
-
Output capacitance
Coss VDS = 25V
-
220
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
130
-
Turn - on delay time
td(on) *4 VDD ⋍ 125V, VGS = 10V
-
50
-
Rise time Turn - off delay time
tr *4 td(off) *4
ID = 16.5A RL = 7.6W
-
200
-
ns
-
120
-
Fall time
tf *4
RG = 10W
-
140
-
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg *4 VDD ⋍ 125V
-
80
-
Qgs *4
ID = 33A
-
25
-
nC
Qgd *4 VGS = 10V
-
27
-
V(plateau) VDD ⋍ 125V, ID = 33A
-
6.6
-
V
lBody diode electrical characteristics (Sou.