DatasheetsPDF.com

RCX330N25 Dataheets PDF



Part Number RCX330N25
Manufacturers Rohm
Logo Rohm
Description Nch 250V 33A Power MOSFET
Datasheet RCX330N25 DatasheetRCX330N25 Datasheet (PDF)

RCX330N25 Nch 250V 33A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 105mW 33A 40W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lApplication Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25C Tc = 100C Pulsed drai.

  RCX330N25   RCX330N25



Document
RCX330N25 Nch 250V 33A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 105mW 33A 40W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lApplication Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25C Tc = 100C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Tc = 25C Ta = 25C Junction temperature Range of storage temperature lOutline TO-220FM lInner circuit (1) (2) (3) (1) Gate (2) Drain (3) Source *1 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Bulk - 500 - RCX330N25 Symbol Value Unit VDSS 250 V ID *1 33 A ID *1 17.9 A ID,pulse *2 132 A VGSS 30 V EAS *3 74.8 mJ IAR *3 16.5 A PD 40 W PD 2.23 W Tj 150 °C Tstg -55 to +150 °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/12 2013.04 - Rev.A RCX330N25 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 3.13 °C/W - - 56 °C/W - - 265 °C lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 250 - - V Zero gate voltage drain current VDS = 250V, VGS = 0V IDSS - Tj = 25°C - 10 mA Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.0 - 5.0 V Static drain - source on - state resistance VGS = 10V, ID = 16.5A - RDS(on) *4 VGS = 10V, ID = 16.5A - Tj = 125°C 77 105 mW 165 230 Forward transfer admittance gfs VDS = 10V, ID = 16.5A 10 20 - S www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/12 2013.04 - Rev.A RCX330N25 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 4500 - Output capacitance Coss VDS = 25V - 220 - pF Reverse transfer capacitance Crss f = 1MHz - 130 - Turn - on delay time td(on) *4 VDD ⋍ 125V, VGS = 10V - 50 - Rise time Turn - off delay time tr *4 td(off) *4 ID = 16.5A RL = 7.6W - 200 - ns - 120 - Fall time tf *4 RG = 10W - 140 - lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg *4 VDD ⋍ 125V - 80 - Qgs *4 ID = 33A - 25 - nC Qgd *4 VGS = 10V - 27 - V(plateau) VDD ⋍ 125V, ID = 33A - 6.6 - V lBody diode electrical characteristics (Sou.


RCX120N25 RCX330N25 RCX510N25


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)