RCX050N25

RCX050N25 Data Sheet 10V Drive Nch MOSFET RCX050N25  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.  Application Switching  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 14.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 2.6  Packaging specifications Package Type Code Basic ordering unit (pieces) RCX050N25 Bulk - 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature VDSS 250 VGSS 30 ID *3 5 IDP *1,3 IS 20 5 ISP *1 20 IAS *2 2.5 EAS *2 1.82 PD *4 30 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Unit V V A A A A A mJ W C C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c*) * TC=25°C * Limited only by maximum channel temperature allowed. Limits 4.16 Unit C / W (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A RCX050N25  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current I...