P Channel Power MOS FET
RJJ0621DPP
P Channel Power MOS FET High Speed Switching
Features
• VDSS : –60 V • RDS(on) : 56 mΩ (MAX) • ID : –25 A • ...
Description
RJJ0621DPP
P Channel Power MOS FET High Speed Switching
Features
VDSS : –60 V RDS(on) : 56 mΩ (MAX) ID : –25 A Lead Mount Type (TO-220FN)
Outline
RENESAS Package code: PRSS0003AB-A (Package name : TO-220FN)
3
12 3
1 2
REJ03G1624-0200 Rev.2.00
Jun 16, 2008
1. Gate 2. Drain 3. Source
Application
DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current (DC) Drain current (Pulsed)*1
ID ID(pulse)
Avalanche current
IAP
Channel dissipation Channel to case thermal impedance
Pch θch-c
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. Pulse width limited by safe operating area.
Ratings –60
+10/–20 –25 –50 –25 35 3.57
–55 to +150 –55 to +150
Unit V V A A A W
°C/W °C °C
(Tc = 25°C)
Conditions VGS = 0 V VDS = 0 V
L = 100 µH
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 1 of 6
RJJ0621DPP
Electrical Characteristics
Item Drain to source breakdown voltage Drain to source leakage current Gate to source leak current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage
Symbol V(BR)DSS
IDSS IGSS IGSS VGS(off) RDS(on)
Ciss Coss Crss td(on)
tr td(off)
tf VDF
Min. –60 — — — –1.0 — — — — — — — — — —
Typ. — — — — –1.7 45 65
1550 190 100 15 25 100 5...
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