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RJJ0621DPP

Renesas

P Channel Power MOS FET

RJJ0621DPP P Channel Power MOS FET High Speed Switching Features • VDSS : –60 V • RDS(on) : 56 mΩ (MAX) • ID : –25 A • ...


Renesas

RJJ0621DPP

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RJJ0621DPP P Channel Power MOS FET High Speed Switching Features VDSS : –60 V RDS(on) : 56 mΩ (MAX) ID : –25 A Lead Mount Type (TO-220FN) Outline RENESAS Package code: PRSS0003AB-A (Package name : TO-220FN) 3 12 3 1 2 REJ03G1624-0200 Rev.2.00 Jun 16, 2008 1. Gate 2. Drain 3. Source Application DC-DC converter, Motor control, Solenoid control, etc. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current (DC) Drain current (Pulsed)*1 ID ID(pulse) Avalanche current IAP Channel dissipation Channel to case thermal impedance Pch θch-c Channel temperature Tch Storage temperature Tstg Note: 1. Pulse width limited by safe operating area. Ratings –60 +10/–20 –25 –50 –25 35 3.57 –55 to +150 –55 to +150 Unit V V A A A W °C/W °C °C (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 100 µH REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 1 of 6 RJJ0621DPP Electrical Characteristics Item Drain to source breakdown voltage Drain to source leakage current Gate to source leak current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. –60 — — — –1.0 — — — — — — — — — — Typ. — — — — –1.7 45 65 1550 190 100 15 25 100 5...




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