Nch 500V 9A Power MOSFET
R5009FNX
Nch 500V 9A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
500V 0.84W
9A 50W
lOutline
TO-220FM
(1)(2)(3)
...
Description
R5009FNX
Nch 500V 9A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
500V 0.84W
9A 50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1) Gate (2) Drain (3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Bulk
Reel size (mm)
-
lApplication Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs) Taping code
500
-
Marking
R5009FNX
lAbsolute maximum ratings(Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt
Tc = 25°C Tc = 100°C
VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD
Tj
Tstg dv/dt *5
500 9 4.4 36 30 5.4 3.5 4.5 50 150 -55 to +150 15
V A A A V mJ mJ A W °C °C V/ns
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1/13
2012.07 - Rev.B
R5009FNX lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 400V, ID = 9A Tj = 125°C
Values Unit 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s...
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