R6025ANZ

R6025ANZ 　　Nch 600V 25A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.15Ω ±25A 150W lOutline TO-3PF 　 　 　　　　　　 　　　　　　 　 　 　 　　　　　　 lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 360 Taping code C8 Marking R6025ANZ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt TC = 25°C TC = 100°C VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg dv/dt 600 ±25 ±12.5 ±100 ±30 39 9.7 12.5 150 150 -55 to +150 15 V A A A V mJ mJ A W ℃ ℃ V/ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/13 20140205 - Rev.001 　 　 R6025ANZ 　 　 　 　　 　 lAbsolute maximum ratings Parameter Drain - Source voltage slope lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 ...