R5019ANX

10V Drive Nch MOSFET R5019ANX  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Data Sheet  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 (1) Gate (2) Drain (3) Source 14.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 2.6  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) R5019ANX Bulk - 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 IAS *2 EAS *2 PD *4 Tch Tstg 500 30 19 76 19 76 9.5 24.3 50 150 55 to 150 *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Unit V V A A A A A mJ W C C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R5019ANX  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage Static drain-source on-state resistance V...