R5011ANX

Transistors 10V Drive Nch MOSFET R5011ANX R5011ANX zStructure Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V. 4) Drive circuits can be simple. 5) Parallel use is easy. zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 (1)Base (2)Collector (3)Emitter 14.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 2.6 zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) R5011ANX Bulk − 500 zInner circuit zAbsolute maximum ratings (Ta=25qC) Parameter Symbol Limits Drain-source voltage VDSS 500 Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP ∗3 ∗1 ∗3 ∗1 ±30 ±11 ±44 11 44 Avalanche Current IAS ∗2 5.5 Avalanche Energy EAS ∗2 8.1 Total power dissipation (Tc=25°C) PD 50 Channel temperature Tch 150 Range of storage temperature Tstg ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed −55 to +150 Unit V V A A A A A mJ W °C °C (1) (1) Gate (2) Drain (3) Source ∗1 (2) (3) ∗1 Body Diode 1/5 Transistors zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W R5011ANX zElectrical characteristics (Ta=25qC) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±100 nA VGS=±30V, VDS=0V Drain-source breakdown voltage V(...