R5009ANJ

R5009ANJ 　　Nch 500V 9A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 500V 0.72Ω ±9A 50W lOutline LPT(S) SC-83 TO-263 　　　　　　 　　　　　　 　 　 　 　　　　　　 lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed 　　to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R5009ANJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature TC = 25°C TC = 100°C VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg 500 ±9 ±4.3 ±36 ±30 5.4 3.5 4.5 50 150 -55 to +150 V A A A V mJ mJ A W ℃ ℃ Reverse diode dv/dt dv/dt 15 V/ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 20150730 - Rev.001 　 　 R5009ANJ 　 　 　 　　 　 lAbsolute maximum ratings Parameter Drain - Source voltage slope lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, waves...