Nch 45V 2A Power MOSFET
RTQ020N05
Nch 45V 2A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
45V 190mW
2A 1.25W
lFeatures 1) Low on - resistance.
2) ...
Description
RTQ020N05
Nch 45V 2A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
45V 190mW
2A 1.25W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lApplication DC/DC converters
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
Datasheet
lOutline
TSMT6
SOT-457T
(6) (5) (4)
(1) (2)
(3)
lInner circuit
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
*1 ESD PROTECTION DIODE *2 BODY DIODE
lPackaging specifications Packaging Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code Marking
Taping 180 8 3,000 TR PU
Symbol
VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg
Value 45 2 8 12 1.25 0.6 150
-55 to +150
Unit V A A V W W °C °C
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1/11
2012.10 - Rev.B
RTQ020N05 lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3 RthJA *4
Values Min. Typ. Max.
Unit
- - 100 °C/W
- - 208 °C/W
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Conditions
Min.
Values Typ.
Max.
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
45 -
-
Unit V
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C
-
Zero gate voltage drain current Gate ...
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