Transistor
4V Drive Nch+Nch MOSFET
SP8K32
SP8K32
zStructure Silicon N-channel MOSFET
zFeatures 1) Built-in G-S Protect...
Transistor
4V Drive Nch+Nch MOSFET
SP8K32
SP8K32
zStructure Silicon N-channel MOSFET
zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).
zDimensions (Unit : mm)
SOP8
zApplications Switching
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SP8K32
Taping TB 2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous Pulsed
ID IDP ∗1
Source current (Body diode)
Continuous Pulsed
Total power dissipation
IS ISP ∗1 PD ∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board.
Limits 60 ±20 ±4.5 ±18 1.0 18 2.0 150
−55 to +150
zEquivalent circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Unit V V A A A A
W/TOTAL °C °C
1/4
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source brea...