SP8K31

Transistor 4V Drive Nch+Nch MOSFET SP8K31 SP8K31 zStructure Silicon N-channel MOSFET zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). zDimensions (Unit : mm) SOP8 zApplications Switching zPackaging dimensions Package Type Code Basic ordering unit (pieces) SP8K31 Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP ∗1 Source current (Body diode) Continuous Pulsed Total power dissipation IS ISP ∗1 PD ∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board. Limits 60 ±20 ±3.5 ±14 1.0 14 2.0 150 −55 to +150 Each lead has same dimensions zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Unit V V A A A A W °C °C 1/4 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown vol...