4V Drive Nch MOSFET
4V Drive Nch MOSFET
RSH065N06
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protec...
Description
4V Drive Nch MOSFET
RSH065N06
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH065N06
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipatino
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID IDP ∗1
IS ISP ∗1 PD ∗2
Tch
Tstg
Limits 60 20 ±6.5 ±26 1.6 26 2.0 150
−55 to +150
Unit V V A A A A W °C °C
Thermal resistance
Parameter Channel to ambient ∗ Mounted on a ceramic board.
Symbol Rth (ch-A) ∗
Limits 62.5
Unit °C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7) (6)
(5) (8) (7) (6) (5)
∗2 ∗1
(1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
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2009.12 - Rev.A
RSH065N06
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Gate-s...
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