K3396

Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features Low gate-source cutoff current IGSS Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature VGDO VGSO IG ID PD Tch Tstg −40 −40 10 1 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.33+–00..0025 3 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° 0.15 min. 0.80±0.05 1.20±0.05 5° Unit: mm 0.10+–00..0025 0.15 min. 0 to 0.01 0.52±0.03 0.15 max. 1: Source 2: Drain 3: Gate SSSMini3-F1 Package Marking Symbol: EB ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Forward transfer admittance Gate-source cutoff voltage Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) VGDS IDSS IGSS Yfs VGSC Ciss Coss Crss IG = −10 µA, VDS = 0 VDS = 10 V, VGS = 0 VGS = −20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, ID = 1 µA VDS = 10 V, VGS = 0,...