RT1A040ZP

1.5V Drive Pch MOSFET RT1A040ZP zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) zApplications Switching zDimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : YE Each lead has same dimensions zPackaging specifications Package Type Code Basic ordering unit(piecies) RT1A040ZP Taping TR 3000 zEquivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) (2) (3) (4) *1 ESD PROTECTION DIODE *2 BODY DIODE (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Range of Storage temerature Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 When mounted on a ceramic board Limits −12 ±10 ±4 ±16 −1 −16 1.25 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit V V A A A A W ∗2 °C °C Unit °C / W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.01 - Rev.A RT1A040ZP zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gete voltage drain current IDSS − − −1 ...