RW1A025ZP

1.5V Drive Pch MOSFET RW1A025ZP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) Low voltage drive.(1.5v)  Application Switching  Dimensions (Unit : mm) WEMT6 (6) (5) (4) Abbreviated symbol : ZF  Packaging specifications Package Type Code Basic ordering unit (pieces) RW1A025ZP Taping T2R 8000 ○  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 12 VGSS 10 ID 2.5 IDP *1 IS 10 0.5 ISP *1 10 PD *2 0.7 Tch 150 Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 179 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Downloaded from Elcodis.com electronic components distributor 1/5 2010.07 - Rev.A RW1A025ZP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admitta...