RZQ045P01

Transistors 1.5V Drive Pch MOSFET RZQ045P01 RZQ045P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) zApplications Switching zDimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : YG zPackaging specifications Package Type Code Basic ordering unit (pieces) RZQ045P01 Taping TR 3000 zEquivalent circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±4.5 ±12 −1 −12 1.25 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth(ch-a) ∗ Limits 100 Unit °C / W (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain 1/5 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12...