RZR040P01

1.5V Drive Pch MOSFET RZR040P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) RZR040P01 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±4 ±16 −0.8 −16 1.0 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth(ch-a) ∗ Limits 125 Unit °C / W zDimensions (Unit : mm) TSMT3 SOT-346T 2.9 0.4 (3) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 (1) Gate (2) Source (3) Drain (1) (2) 0.95 0.95 1.9 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : YE zInner circuit (3) ∗2 (1) ∗1 ∗1 ESD PROTECTION DIODE (2) ∗2 BODY DIODE (1) Gate (2) Source (3) Drain www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RZR040P01 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain...