1.5V Drive Pch MOSFET
1.5V Drive Pch MOSFET
RZL035P01
zStructure Silicon P-channel MOSFET
zFeatures 1) Low on-resistance. 2) High power packag...
Description
1.5V Drive Pch MOSFET
RZL035P01
zStructure Silicon P-channel MOSFET
zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V)
zApplication Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL035P01
Taping TR 3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −12 ±10 ±3.5 ±14 −0.8 −14 1.0 150 −55 to +150
Unit V V A A A A W °C °C
zThermal resistance
Parameter Channel to ambient
∗ When mounted on a ceramic board.
Symbol Rth (ch-a) ∗
Limits 125
Unit °C / W
0.2Max.
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YB
zInner circuit
(6) (5)
(4)
∗2
(1) (2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗1
(1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain
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1/4
2009.12 - Rev.A
RZL035P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
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