EM6K33

EM6K33 　　Nch+Nch 50V 200mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 50V 2.2Ω ±200mA 150mW lFeatures 1) High-speed switching. 2) Small package(EMT6) 3) Ultra low voltage drive(1.2V drive). lOutline SOT-563 SC-107C EMT6 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing lApplication Reel size (mm) Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total element VDSS ID IDP*1 VGSS PD*2 50 ±200 ±800 ±8 150 120 Junction temperature Operating junction and storage temperature range Tj 150 Tstg -55 to +150 Embossed Tape 180 8 8000 T2R K33 Unit V mA mA V mW ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 　 　 EM6K33 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient total element 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*2 Values Unit Min. Typ. Max. - - 833 ℃/W - - 1042 lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate thr...