EM6J1

1.2V Drive Pch MOSFET EM6J1 zStructure Silicon P-channel MOSFET zFeatures 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. zApplications Switching zDimensions (Unit : mm) EMT6 SOT-563 Abbreviated symbol : J01 Each lead has same dimensions zPackaging specifications Type EM6J1 Package Code Basic ordering unit (pieces) Taping T2R 8000 zInner circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Total power dissipation VDSS VGSS ID IDP∗1 IS ISP∗1 PD∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 Each terminal mounted on a recommended land Limits −20 ±10 ±200 ±800 −100 −800 150 120 150 −55 to +150 Unit V V mA mA mA mA mW / TOTAL mW / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ Each therminal mounted on a recommended land Symbol Rth (ch-a)∗ Limits 833 1042 Unit °C / W / TOTAL °C / W / ELEMENT www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.05 - Rev.A EM6J1 zElectrical characteristics (Ta=25°C) Param...