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IXTH11N80

IXYS

MegaMOS FET

Description
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM 11N80 13N80 11N80 13N80 800 V...


IXYS

IXTH11N80

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