N MOS UHF TV
MOS Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm
f = 470 860 MHz
Unit mm
TA = 25
D.C.
VDS VGS ID PT Rth Tch Tstg
60 7 15 290 0.6 200 65 200
V V A W /W
TA = 25
IGSS VGS off IDSS gm PO hD GL
VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V ...
