SP8K33FRA

Transistors 4V Drive Nch+Nch MOSFET SP8K33 FRA SP8SKP383KF3R3A AEC-Q101 Qualified zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). zApplication Switching Each lead has same dimensions zPackaging specifications Package Type Code Basic ordering unit (pieces) SPS8PK8K33F3RA Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 60 ±20 ±5.0 ±20 1.0 20 2.0 150 −55 to +150 zInner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Unit V V A A A A W/TOTAL °C °C 1/4 Transistors zElectrical characteristics (Ta=25°C) Parameter S...