ECH8419

Ordering number : ENA1886A ECH8419 N-Channel Power MOSFET 35V, 9A, 17mΩ, Single ECH8 http://onsemi.com Features ON-resistance RDS(on)1=13mΩ (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 35 ±20 9 40 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 85 ECH8419-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking KZ Lot No. TL 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 87 6 5 12 3 4 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/20211PE TKIM TC-00002564 No. A1886-1/7 ECH8419 Electrical Characteristics at Ta=25°C Parameter ...