IGBT
IXDR 35N60 BD1
IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2...
Description
IXDR 35N60 BD1
IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G E
G C E
Isolated back surface
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC
TJ Tstg VISOL FC Weight
Symbol
V (BR)CES
VGE(th) ICES
I
GES
VCE(sat)
Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous Transient
TC = 25°C TC = 90°C TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH
VGE= ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive
TC = 25°C
IGBT Diode
50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical
Maximum Ratings
600 V 600 V
±20 V ±30 V
38 A 24 A 48 A
ICM = 110 VCEK < VCES
10
A µs
125 50
-55 ... +150 -55 ... +150
2500 20...120
6
W W
°C °C
V~ N g
Conditions
V =0V GE
IC = 0.7 mA, VCE = VGE VCE = VCES
V = 0 V, V = ± 20 V CE GE
IC = 35 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
600 V
3 5V
TJ = 25°C TJ = 125°C
0.1 mA 1 mA
± 500 nA
2.2 2.7 V
Features
● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for
easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● Epoxy meets UL 94V-0 ● Isolated and UL registered E153432
Advantages
● DCB Isolated mounting tab ● Meets TO-247AD package Outline ● Package for clip or spr...
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