EMH1307

Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET –20V, –6.5A, 26mΩ, Single EMH8 http://onsemi.com Features ON-resistance RDS(on)1 : 20mΩ(typ.) 1.8V drive Protection diode in Input Capacitance Ciss=1100pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --20 ±10 --6.5 --26 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7045-001 0.2 8 5 0.125 EMH1307-TL-H Product & Package Information Package : EMH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Taping Type : TL Marking 0.05 0.75 0.2 1.7 0.2 2.1 1 0.5 2.0 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain EMH8 TL Electrical Connection 876 5 JG Lot No. 12 3 4 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7 EMH1307 Electrical Characterist...