P-Channel Power MOSFET
Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26mΩ, Single EMH8
http://onsemi.com
Features
•...
Description
Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26mΩ, Single EMH8
http://onsemi.com
Features
ON-resistance RDS(on)1 : 20mΩ(typ.) 1.8V drive Protection diode in
Input Capacitance Ciss=1100pF(typ.) Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings --20 ±10 --6.5 --26 1.5 150
--55 to +150
Unit V V A A W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7045-001
0.2 8
5
0.125 EMH1307-TL-H
Product & Package Information
Package
: EMH8
JEITA, JEDEC
:-
Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
0.05 0.75 0.2 1.7 0.2 2.1
1 0.5
2.0
4
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
EMH8
TL
Electrical Connection
876 5
JG
Lot No.
12 3 4
Semiconductor Components Industries, LLC, 2013 July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7
EMH1307
Electrical Characterist...
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