IGBT Module
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4
IC25 = 270 A
VCES
=...
Description
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4
IC25 = 270 A
VCES
= 1200 V
V = 2.2 V CE(sat) typ.
MII
3
MID
3
MDI
3
8 91
8 19
1
11 11 10 2 10 2
2
3 2 1
11 10
9 8
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA
Ptot TJ Tstg VISOL
Md
Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
Continuous Transient
TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms
VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive
VGE= ±15 V, TJ = 125°C, RG = 6.8 W Clamped inductive load, L = 100 mH
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Insulating material: Al2O3
Mounting torque (module)
(teminals)
dS dA a
Weight
Creepage distance on surface Strike distance through air Max. allowable acceleration
Typical
Data according to a single IGBT/FRED unless otherwise stated.
Maximum Ratings
1200 1200
±20 ±30
270 180 360
10
V V
V V
A A A
ms
ICM = 360 VCEK < VCES
1130
150 -40 ... +150
4000 4800
A
W °C °C V~ V~
2.25-2.75 20-25
2.5-3.7 22-33
10 9.6 50
250 8.8
Nm lb.in.
Nm lb.in.
mm mm m/s2
g oz.
E 72873 Features q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for
easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873
Advantages
q space...
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