MKI50-12F7

Advanced Technical Information MKI 50-12F7 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 65 A V CES = 1200 V VCE(sat) typ. = 3.2 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 19 2 10 16 14 3 11 4 12 17 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 13 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 13 Ω; TVJ = 125°C SCSOA; non-repetitive 65 45 100 VCES 10 A A A µs TC = 25°C 350 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 2 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A V GE = ±15 V; R G = 13 Ω 3.2 3.8 V 3.8 V 4.5 6.5 V 0.7 mA 2.5 mA 500 nA 130 ns 60 ns 360 ns 30 ns 6.0 mJ 2.5 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A (per IGBT) 3.3 nF 600 nC 0.35 K/W Features Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable pins for PCB m...