MKI75-06A7

MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 600 V VCE(sat) =typ. 2.1 V Type: MKI 75-06 A7 MKI 75-06 A7T NTC - Option: without NTC with NTC 13 T1 D1 T5 D5 1 T 9 2 10 16 14 T T2 D2 T6 D6 3 11 4 12 17 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 90 60 VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 120 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 18 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 280 W Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 1.5 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 75 A VGE = ±15 V; RG = 18 Ω 2.1 2.6 V 2.5 V 4.5 6.5 V 1.3 mA 0.9 mA 200 nA 50 ns 50 ns 270 ns 40 ns 3.5 mJ 2.5 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A (per IGBT) 3200 190 pF nC 0.44 K/W B3 Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast fr...